Infineon Technologies AG IR2113E6SCB

表面安装

YES

终端数量

16

ECCN (US)

EAR99

HTS

8542.39.00.01

Driver Type

高低侧

Driver Configuration

Non-Inverting

High and Low Sides Dependency

Independent

Maximum Rise Time (ns)

35

Maximum Fall Time (ns)

25

Maximum Propagation Delay Time (ns)

150

Input Logic Compatibility

LSTTL|CMOS

Minimum Operating Supply Voltage (V)

10

Maximum Operating Supply Voltage (V)

20

Typical Input Low Threshold Voltage (V)

6(Max)

Typical Input High Threshold Voltage (V)

9.5(Min)

Reference Voltage (V)

600(Max)

Peak Output Current(A)

2(Min)

Maximum Power Dissipation (mW)

1600

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Special Features

欠压锁定

Standard Package Name

LLCC

Supplier Package

LLCC

Mounting

表面贴装

Package Height

3.22(Max)

Package Length

9.14(Max)

Package Width

7.49(Max)

PCB changed

18

Lead Shape

No Lead

Package Description

QCCN,

Package Style

CHIP CARRIER

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Supply Voltage-Nom

15 V

Reflow Temperature-Max (s)

未说明

Supply Voltage-Min

5 V

Rohs Code

无

Manufacturer Part Number

IR2113E6SCB

Turn-on Time

260 µs

Package Code

QCCN

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

活跃

Turn-off Time

220 µs

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Supply Voltage-Max

20 V

Risk Rank

5.29

Usage Level

Military grade

ECCN 代码

EAR99

类型

IGBT|MOSFET

HTS代码

8542.39.00.01

技术

CMOS

端子位置

QUAD

终端形式

无铅

峰值回流焊温度（摄氏度）

未说明

功能数量

1

端子间距

1.27 mm

Reach合规守则

unknown

引脚数量

18

JESD-30代码

R-CQCC-N16

输出的数量

2

资历状况

不合格

座位高度-最大

3.22 mm

接口IC类型

基于半桥的mosfet驱动器

筛选水平

MIL-STD-883 Class B

驱动器数量

2

输出峰值电流限制-名

2 A

电源电压1-额定值

15 V

高边驱动器

YES

电源电压1-最小值

6 V

电源电压1-最大值

420 V

宽度

7.305 mm

长度

8.955 mm

RoHS状态

RoHS non-compliant