Infineon Technologies AG IR2130DSCB

表面安装

NO

终端数量

28

ECCN (US)

EAR99

HTS

8542.39.00.01

Driver Type

高低侧

Driver Configuration

Non-Inverting

Bridge Type

3-Phase Bridge|Half Bridge

High and Low Sides Dependency

Independent

Maximum Rise Time (ns)

125

Maximum Fall Time (ns)

55

Maximum Propagation Delay Time (ns)

850

Input Logic Compatibility

5V|CMOS|LSTTL

Minimum Operating Supply Voltage (V)

10

Maximum Operating Supply Voltage (V)

20

Typical Input Low Threshold Voltage (V)

0.8(Max)

Typical Input High Threshold Voltage (V)

2.2(Min)

Reference Voltage (V)

400(Max)

Peak Output Current(A)

0.5(Typ)

Maximum Power Dissipation (mW)

1500

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Special Features

Undervoltage Lockout|Current Limit

Standard Package Name

MO-038AB

Supplier Package

MO-038AB

Mounting

通孔

Package Height

3.15(Max)

Package Length

36.22(Max)

Package Width

15.49(Max)

PCB changed

28

Package Description

DIP,

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Supply Voltage-Nom

15 V

Reflow Temperature-Max (s)

未说明

Supply Voltage-Min

5 V

Manufacturer Part Number

IR2130DSCB

Turn-on Time

600 µs

Package Code

DIP

Package Shape

RECTANGULAR

Manufacturer

International Rectifier

Part Life Cycle Code

活跃

Turn-off Time

850 µs

Ihs Manufacturer

INTERNATIONAL RECTIFIER CORP

Supply Voltage-Max

10 V

Risk Rank

5.62

Part Package Code

DIP

Usage Level

Military grade

无铅代码

无

零件状态

Unconfirmed

类型

MOSFET|IGBT

端子表面处理

锡铅

端子位置

DUAL

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

未说明

功能数量

1

端子间距

2.54 mm

Reach合规守则

unknown

引脚数量

28

JESD-30代码

R-PDIP-T28

输出的数量

6

资历状况

不合格

座位高度-最大

4.8 mm

接口IC类型

基于缓冲器或逆变器的MOSFET驱动器

筛选水平

MIL-STD-883 Class B

驱动器数量

6

输出峰值电流限制-名

0.42 A

电源电压1-额定值

15 V

高边驱动器

YES

电源电压1-最大值

420 V

宽度

15.24 mm

长度

35.64 mm

RoHS状态

RoHS non-compliant