Integrated Device Technology (IDT) 6116LA150TPB
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6116LA150TPB详情
Integrated Device Technology (IDT) 6116LA150TPB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
24
Manufacturer Part Number
6116LA150TPB
Rohs Code
无
Part Life Cycle Code
活跃
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
DIP
Package Description
DIP,
Risk Rank
5.68
Access Time-Max
150 ns
Number of Words
2048 words
Number of Words Code
2000
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
未说明
Usage Level
Military grade
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A001.A.2.C
端子表面处理
锡铅
HTS代码
8542.32.00.41
端子位置
DUAL
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
功能数量
1
Reach合规守则
compliant
引脚数量
24
JESD-30代码
R-PDIP-T24
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
温度等级
MILITARY
电源电压-最小值(Vsup)
4.5 V
操作模式
ASYNCHRONOUS
组织结构
2KX8
内存宽度
8
记忆密度
16384 bit
筛选水平
MIL-STD-883 Class B
并行/串行
PARALLEL
内存IC类型
标准SRAM
6116LA150TPB拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)








哦! 它是空的。