Integrated Device Technology (IDT) 7026L55GB
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7026L55GB
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7026L55GB datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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7026L55GB详情
Integrated Device Technology (IDT) 7026L55GB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
84
Manufacturer Part Number
7026L55GB
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
PGA
Package Description
PGA, PGA84M,11X11
Risk Rank
5.69
Access Time-Max
55 ns
Number of Words
16384 words
Number of Words Code
16000
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Code
PGA
Package Equivalence Code
PGA84M,11X11
Package Shape
SQUARE
Package Style
网格排列
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
20
Usage Level
Military grade
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A001.A.2.C
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8542.32.00.41
端子位置
PERPENDICULAR
终端形式
PIN/PEG
峰值回流焊温度(摄氏度)
240
功能数量
1
端子间距
2.54 mm
Reach合规守则
not_compliant
引脚数量
84
JESD-30代码
S-CPGA-P84
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
MILITARY
电源电压-最小值(Vsup)
4.5 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.27 mA
组织结构
16KX16
输出特性
3-STATE
内存宽度
16
待机电流-最大值
0.01 A
记忆密度
262144 bit
筛选水平
MIL-PRF-38535
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
4.5 V
7026L55GB拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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