Integrated Device Technology (IDT) 70P257L55BYGI
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70P257L55BYGI
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70P257L55BYGI datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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70P257L55BYGI详情
Integrated Device Technology (IDT) 70P257L55BYGI重要参数规格及、参数值,及相似型号如下:
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表面安装
YES
终端数量
100
Manufacturer Part Number
70P257L55BYGI
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
BGA
Package Description
6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100
Risk Rank
5.49
Access Time-Max
55 ns
Moisture Sensitivity Levels
3
Number of Words
8192 words
Number of Words Code
8000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
VFBGA
Package Equivalence Code
BGA100,10X10,20
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Supply Voltage-Nom (Vsup)
1.8 V
Reflow Temperature-Max (s)
30
JESD-609代码
e1
ECCN 代码
EAR99
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.5 mm
Reach合规守则
unknown
引脚数量
100
JESD-30代码
S-PBGA-B100
资历状况
不合格
电源电压-最大值(Vsup)
1.9 V
电源
1.8 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
1.7 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.025 mA
组织结构
8KX16
输出特性
3-STATE
座位高度-最大
1 mm
内存宽度
16
待机电流-最大值
0.000008 A
记忆密度
131072 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
1.7 V
长度
6 mm
宽度
6 mm
70P257L55BYGI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。