Integrated Device Technology (IDT) 71V35781S200BG
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71V35781S200BG
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71V35781S200BG datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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71V35781S200BG详情
Integrated Device Technology (IDT) 71V35781S200BG重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
119
Manufacturer Part Number
71V35781S200BG
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
BGA
Package Description
BGA-119
Risk Rank
5.92
Access Time-Max
3.1 ns
Clock Frequency-Max (fCLK)
200 MHz
Moisture Sensitivity Levels
3
Number of Words
262144 words
Number of Words Code
256000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Equivalence Code
BGA119,7X17,50
Package Shape
RECTANGULAR
Package Style
网格排列
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
20
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn63Pb37)
附加功能
流水线结构
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
not_compliant
引脚数量
119
JESD-30代码
R-PBGA-B119
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.36 mA
组织结构
256KX18
输出特性
3-STATE
内存宽度
18
待机电流-最大值
0.03 A
记忆密度
4718592 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
缓存SRAM
待机电压-最小值
3.14 V
71V35781S200BG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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