Integrated Device Technology (IDT) 71V424L12PHI
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71V424L12PHI
1179-71V424L12PHI
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SRAM ASYNC SGL 3.3V 4MBIT 512KX8 12NS 44TSOP-II - Bulk (Alt: 71V424L12PHI)
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71V424L12PHI详情
Integrated Device Technology (IDT) 71V424L12PHI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
44
Manufacturer Part Number
71V424L12PHI
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
TSOP2
Package Description
0.400 INCH, TSOP2-44
Risk Rank
5.75
Access Time-Max
12 ns
Moisture Sensitivity Levels
3
Number of Words
524288 words
Number of Words Code
512000
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP44,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
JESD-609代码
e0
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Lead (Sn85Pb15)
HTS代码
8542.32.00.41
端子位置
DUAL
终端形式
鸥翼
功能数量
1
端子间距
0.8 mm
Reach合规守则
not_compliant
引脚数量
44
JESD-30代码
R-PDSO-G44
资历状况
不合格
电源电压-最大值(Vsup)
3.6 V
电源
3.3 V
温度等级
INDUSTRIAL
电源电压-最小值(Vsup)
3 V
操作模式
ASYNCHRONOUS
电源电流-最大值
0.155 mA
组织结构
512KX8
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
8
待机电流-最大值
0.01 A
记忆密度
4194304 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
3 V
长度
18.41 mm
宽度
10.16 mm
71V424L12PHI拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。