Integrated Device Technology (IDT) 71V633S12PF
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71V633S12PF
1179-71V633S12PF
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71V633S12PF datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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71V633S12PF详情
Integrated Device Technology (IDT) 71V633S12PF重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
100
Supply Voltage-Nom (Vsup)
3.3 V
Package Style
FLATPACK, LOW PROFILE
Package Shape
RECTANGULAR
Package Equivalence Code
QFP100,.63X.87
Package Code
LQFP
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
70 °C
Number of Words Code
64000
Number of Words
65536 words
Moisture Sensitivity Levels
3
Clock Frequency-Max (fCLK)
50 MHz
Access Time-Max
12 ns
Risk Rank
5.88
Package Description
14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Life Cycle Code
Obsolete
Rohs Code
无
Manufacturer Part Number
71V633S12PF
Reflow Temperature-Max (s)
6
JESD-609代码
e0
无铅代码
无
端子表面处理
Tin/Lead (Sn85Pb15)
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.65 mm
Reach合规守则
not_compliant
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.63 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.15 mA
组织结构
64KX32
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
32
待机电流-最大值
0.015 A
记忆密度
2097152 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
3.14 V
长度
20 mm
宽度
14 mm
71V633S12PF拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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