Integrated Device Technology (IDT) IC61S25636T-166TQ
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IC61S25636T-166TQ
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IC61S25636T-166TQ datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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IC61S25636T-166TQ详情
Integrated Device Technology (IDT) IC61S25636T-166TQ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
100
Manufacturer Part Number
IC61S25636T-166TQ
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
Package Description
LQFP-100
Risk Rank
5.88
Access Time-Max
3.5 ns
Clock Frequency-Max (fCLK)
166 MHz
Number of Words
262144 words
Number of Words Code
256000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LQFP
Package Equivalence Code
QFP100,.63X.87
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
JESD-609代码
e0
端子表面处理
Tin/Lead (Sn/Pb)
附加功能
流水线结构
端子位置
QUAD
终端形式
鸥翼
功能数量
1
端子间距
0.65 mm
Reach合规守则
compliant
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.63 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
端口的数量
1
操作模式
SYNCHRONOUS
电源电流-最大值
0.33 mA
组织结构
256KX36
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
36
待机电流-最大值
0.08 A
记忆密度
9437184 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
输出启用
YES
长度
20 mm
宽度
14 mm
IC61S25636T-166TQ拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







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