Integrated Device Technology (IDT) IDT6167LA55FB
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IDT6167LA55FB
1179-IDT6167LA55FB
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Static RAM, 16Kx1, 20 Pin, Ceramic, Flat Pack
1最小包装量--
IDT6167LA55FB详情
Integrated Device Technology (IDT) IDT6167LA55FB重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
20
Manufacturer Part Number
IDT6167LA55FB
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
DFP
Package Description
FP-20
Risk Rank
8.8
Access Time-Max
55 ns
Number of Words
16384 words
Number of Words Code
16000
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Code
DFP
Package Equivalence Code
FL20,.3
Package Shape
RECTANGULAR
Package Style
FLATPACK
Supply Voltage-Nom (Vsup)
5 V
Reflow Temperature-Max (s)
20
Usage Level
Military grade
JESD-609代码
e0
无铅代码
无
ECCN 代码
3A001.A.2.C
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8542.32.00.41
端子位置
DUAL
终端形式
FLAT
峰值回流焊温度(摄氏度)
225
功能数量
1
端子间距
1.27 mm
Reach合规守则
not_compliant
引脚数量
20
JESD-30代码
R-CDFP-F20
资历状况
不合格
电源电压-最大值(Vsup)
5.5 V
电源
5 V
温度等级
MILITARY
电源电压-最小值(Vsup)
4.5 V
端口的数量
1
操作模式
ASYNCHRONOUS
电源电流-最大值
0.06 mA
组织结构
16KX1
输出特性
3-STATE
座位高度-最大
2.3368 mm
内存宽度
1
记忆密度
16384 bit
筛选水平
38535Q/M;38534H;883B
并行/串行
PARALLEL
I/O类型
SEPARATE
内存IC类型
标准SRAM
待机电压-最小值
2 V
输出启用
NO
宽度
8.89 mm
IDT6167LA55FB拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。