Integrated Device Technology (IDT) IDT70T651S8BCG
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IDT70T651S8BCG
1179-IDT70T651S8BCG
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17 X 17 MM, 1.40 MM PITCH, GREEN, BGA-256
1最小包装量--
IDT70T651S8BCG详情
Integrated Device Technology (IDT) IDT70T651S8BCG重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
YES
终端数量
256
Manufacturer Part Number
IDT70T651S8BCG
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
BGA
Package Description
17 X 17 MM, 1.40 MM PITCH, GREEN, BGA-256
Risk Rank
5.69
Access Time-Max
8 ns
Moisture Sensitivity Levels
3
Number of Words
262144 words
Number of Words Code
256000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Equivalence Code
BGA256,16X16,40
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE
Supply Voltage-Nom (Vsup)
2.5 V
Reflow Temperature-Max (s)
30
JESD-609代码
e1
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
1 mm
Reach合规守则
unknown
引脚数量
256
JESD-30代码
S-PBGA-B256
资历状况
不合格
电源电压-最大值(Vsup)
2.6 V
电源
2.5,2.5/3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
2.4 V
端口的数量
2
操作模式
ASYNCHRONOUS
电源电流-最大值
0.475 mA
组织结构
256KX36
输出特性
3-STATE
座位高度-最大
1.5 mm
内存宽度
36
待机电流-最大值
0.01 A
记忆密度
9437184 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
DUAL-PORT SRAM
待机电压-最小值
2.4 V
长度
17 mm
宽度
17 mm
IDT70T651S8BCG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。