Integrated Device Technology (IDT) IDT71V3579SA75BQG
- 收藏
- 对比
IDT71V3579SA75BQG
1179-IDT71V3579SA75BQG
集成电路(IC)
--
大陆
立即发货

IDT71V3579SA75BQG datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
1最小包装量--
IDT71V3579SA75BQG详情
Integrated Device Technology (IDT) IDT71V3579SA75BQG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
165
Manufacturer Part Number
IDT71V3579SA75BQG
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
BGA
Package Description
FBGA-165
Risk Rank
5.76
Access Time-Max
7.5 ns
Clock Frequency-Max (fCLK)
117 MHz
Moisture Sensitivity Levels
3
Number of Words
262144 words
Number of Words Code
256000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
TBGA
Package Equivalence Code
BGA165,11X15,40
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
30
JESD-609代码
e1
ECCN 代码
3A991.B.2.A
端子表面处理
Tin/Silver/Copper (Sn/Ag/Cu)
附加功能
FLOW-THROUGH ARCHITECTURE
HTS代码
8542.32.00.41
端子位置
BOTTOM
终端形式
BALL
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
1 mm
Reach合规守则
unknown
引脚数量
165
JESD-30代码
R-PBGA-B165
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.255 mA
组织结构
256KX18
输出特性
3-STATE
座位高度-最大
1.2 mm
内存宽度
18
待机电流-最大值
0.03 A
记忆密度
4718592 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
缓存SRAM
待机电压-最小值
3.14 V
长度
15 mm
宽度
13 mm
IDT71V3579SA75BQG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。