Integrated Device Technology (IDT) IDT71V65903S75PFG
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IDT71V65903S75PFG
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IDT71V65903S75PFG datasheet pdf and Integrated Circuits (ICs) product details from Integrated Device Technology (IDT) stock available at utmel
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IDT71V65903S75PFG详情
Integrated Device Technology (IDT) IDT71V65903S75PFG重要参数规格及、参数值,及相似型号如下:
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表面安装
YES
终端数量
100
Manufacturer Part Number
IDT71V65903S75PFG
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEGRATED DEVICE TECHNOLOGY INC
Part Package Code
QFP
Package Description
14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, GREEN, PLASTIC, TQFP-100
Risk Rank
5.59
Access Time-Max
7.5 ns
Clock Frequency-Max (fCLK)
100 MHz
Moisture Sensitivity Levels
3
Number of Words
524288 words
Number of Words Code
512000
Operating Temperature-Max
70 °C
Package Body Material
PLASTIC/EPOXY
Package Code
LQFP
Package Equivalence Code
QFP100,.63X.87
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE
Supply Voltage-Nom (Vsup)
3.3 V
Reflow Temperature-Max (s)
30
JESD-609代码
e3
ECCN 代码
3A991.B.2.A
端子表面处理
Matte Tin (Sn) - annealed
附加功能
FLOW-THROUGH ARCHITECTURE
HTS代码
8542.32.00.41
端子位置
QUAD
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
功能数量
1
端子间距
0.65 mm
Reach合规守则
unknown
引脚数量
100
JESD-30代码
R-PQFP-G100
资历状况
不合格
电源电压-最大值(Vsup)
3.465 V
电源
3.3 V
温度等级
COMMERCIAL
电源电压-最小值(Vsup)
3.135 V
操作模式
SYNCHRONOUS
电源电流-最大值
0.275 mA
组织结构
512KX18
输出特性
3-STATE
座位高度-最大
1.6 mm
内存宽度
18
待机电流-最大值
0.04 A
记忆密度
9437184 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
ZBT SRAM
待机电压-最小值
3.14 V
长度
20 mm
宽度
14 mm
IDT71V65903S75PFG拓展信息
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)
Integrated Device Technology (IDT)







哦! 它是空的。