IXYS IXFH12N65X2

包装/外壳

TO-247-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

12 A

Rds On - Drain-Source Resistance

310 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

18.5 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

180 W

Channel Mode

Enhancement

Tradename

HiPerFET

Fall Time

12 ns

Forward Transconductance - Min

4.8 S

Factory Pack QuantityFactory Pack Quantity

30

Typical Turn-Off Delay Time

45 ns

Typical Turn-On Delay Time

27 ns

Unit Weight

0.211644 oz

Manufacturer Part Number

IXFH12N65X2

Part Life Cycle Code

Transferred

Ihs Manufacturer

IXYS CORP

Risk Rank

8.4

系列

650V Ultra Junction X2

包装

Tube

Reach合规守则

compliant

配置

Single

通道数量

1 Channel

上升时间

26 ns

晶体管类型

1 N-Channel