IXYS IXTA8N70X2

包装/外壳

TO-263-3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

700 V

Id - Continuous Drain Current

8 A

Rds On - Drain-Source Resistance

500 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

12 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

150 W

Channel Mode

Enhancement

Tradename

HiPerFET

Fall Time

24 ns

Forward Transconductance - Min

4.8 S

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

53 ns

Typical Turn-On Delay Time

24 ns

Unit Weight

0.139332 oz

Package Description

,

Manufacturer Part Number

IXTA8N70X2

Part Life Cycle Code

活跃

Ihs Manufacturer

LITTELFUSE INC

Risk Rank

5.37

系列

X2-Class

包装

Tube

Reach合规守则

unknown

配置

Single

通道数量

1 Channel

上升时间

28 ns

晶体管类型

1 N-Channel