IXYS IXTP14N60X2

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

IXYS

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

180W (Tc)

Base Product Number

IXTP14

Qualification

-

Continuous Drain Current Id

14A

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

23 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

180 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Forward Transconductance - Min

7 S

Channel Mode

Enhancement

Manufacturer

IXYS

Brand

IXYS

Qg - Gate Charge

16.7 nC

Rds On - Drain-Source Resistance

250 mOhms

RoHS

Details

Typical Turn-Off Delay Time

75 ns

Id - Continuous Drain Current

14 A

系列

Ultra X2

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

180W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

250mOhm @ 7A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 250μA

输入电容(Ciss)(Max)@Vds

740 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

16.7 nC @ 10 V

上升时间

27 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET