IXYS IXZR16N60B-00

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (mOhm)

530(Typ)@20V

Typical Gate Charge @ Vgs (nC)

42@10V

Typical Input Capacitance @ Vds (pF)

2040@480V

Typical Reverse Transfer Capacitance @ Vds (pF)

20@480V

Typical Output Capacitance @ Vds (pF)

160@480V

Maximum Power Dissipation (mW)

3000

Typical Turn-Off Delay Time (ns)

4

Typical Turn-On Delay Time (ns)

4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Supplier Package

ISOPLUS 247

Military

无

Mounting

通孔

Package Height

21.34(Max)

Package Length

16.13(Max)

Package Width

5.21(Max)

PCB changed

3

Tab

Tab

Lead Shape

通孔

类型

MOSFET

引脚数量

3

配置

Single

信道型

N