Littelfuse IXFA10N60P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5.5

Operating Junction Temperature (°C)

150

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

740@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Gate to Drain Charge (nC)

10

Typical Gate to Source Charge (nC)

12

Typical Reverse Recovery Charge (nC)

320

Typical Input Capacitance @ Vds (pF)

1720@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

14@25V

Minimum Gate Threshold Voltage (V)

3

Typical Output Capacitance (pF)

160

Maximum Power Dissipation (mW)

200000

Typical Fall Time (ns)

21

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

65

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Pulsed Drain Current @ TC=25°C (A)

25

Typical Gate Plateau Voltage (V)

5.9

Typical Reverse Recovery Time (ns)

120

Maximum Diode Forward Voltage (V)

1.5

Maximum Positive Gate Source Voltage (V)

30

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

零件状态

活跃

引脚数量

3

配置

Single

信道型

N