Littelfuse IXFA12N65X2-TRL

包装/外壳

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (mOhm)

310@10V

Typical Gate Charge @ Vgs (nC)

18.5@10V

Typical Gate Charge @ 10V (nC)

18.5

Typical Input Capacitance @ Vds (pF)

1134@25V

Maximum Power Dissipation (mW)

180000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

45

Typical Turn-On Delay Time (ns)

27

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.7(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

180 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

18.5 nC

Rds On - Drain-Source Resistance

310 mOhms

Id - Continuous Drain Current

12 A

包装

卷带

系列

HiPerFET

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N