Littelfuse IXFA130N10T

包装/外壳

TO-263-3

EU RoHS

Compliant

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

130

Maximum Drain Source Resistance (MOhm)

9.1@10V

Typical Gate Charge @ Vgs (nC)

104@10V

Typical Gate Charge @ 10V (nC)

104

Typical Input Capacitance @ Vds (pF)

5080@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

47

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-263AA

Vds - Drain-Source Breakdown Voltage

100 V

Transistor Polarity

N-Channel

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

9.1 mOhms

Id - Continuous Drain Current

130 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N