Littelfuse IXFB210N20P

包装/外壳

PLUS-264-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

210

Maximum Drain Source Resistance (mOhm)

10.5@10V

Typical Gate Charge @ Vgs (nC)

255@10V

Typical Gate Charge @ 10V (nC)

255

Typical Input Capacitance @ Vds (pF)

18600@25V

Maximum Power Dissipation (mW)

1500000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

43

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

Vds - Drain-Source Breakdown Voltage

200 V

Pd - Power Dissipation

1.5 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

10.5 mOhms

Id - Continuous Drain Current

210 A

系列

IXFB210N20

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N