Littelfuse IXFB210N30P3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.21.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

210

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

14.5@10V

Typical Gate Charge @ Vgs (nC)

268@10V

Typical Gate Charge @ 10V (nC)

268

Typical Input Capacitance @ Vds (pF)

16200@25V

Maximum Power Dissipation (mW)

1890000

Typical Fall Time (ns)

13

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

94

Typical Turn-On Delay Time (ns)

46

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.59(Max)

Package Width

5.31(Max)

Package Length

20.29(Max)

PCB changed

3

Tab

Tab

Supplier Package

PLUS 264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N