Littelfuse IXFJ26N50P3

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

14

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

295@10V

Typical Gate Charge @ Vgs (nC)

42@10V

Typical Gate Charge @ 10V (nC)

42

Typical Input Capacitance @ Vds (pF)

2220@25V

Maximum Power Dissipation (mW)

180000

Typical Fall Time (ns)

5

Typical Rise Time (ns)

7

Typical Turn-Off Delay Time (ns)

38

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247 ISO

零件状态

活跃

引脚数量

3

配置

Single

信道型

N