Littelfuse IXFN210N20P

包装/外壳

SOT-227-4

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

188

Maximum Drain Source Resistance (MOhm)

10.5@10V

Typical Gate Charge @ Vgs (nC)

255@10V

Typical Gate Charge @ 10V (nC)

255

Typical Input Capacitance @ Vds (pF)

18600@25V

Maximum Power Dissipation (mW)

1070000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

43

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

Screw

Package Height

9.6(Max)

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Standard Package Name

SOT

Supplier Package

SOT-227B

Lead Shape

Screw

Continuous Drain Current Id

188A

Pd - Power Dissipation

1.07 kW

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

螺钉安装

Rds On - Drain-Source Resistance

10.5 mOhms

零件状态

活跃

类型

HiperFET

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

配置

单双源

功率耗散

1.07kW

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块