参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
EU RoHS
符合免除
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
800
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
3.5
Maximum Drain Source Resistance (MOhm)
1440@10V
Typical Gate Charge @ Vgs (nC)
32@10V
Typical Gate Charge @ 10V (nC)
32
Typical Input Capacitance @ Vds (pF)
1890@25V
Maximum Power Dissipation (mW)
50000
Typical Fall Time (ns)
24
Typical Rise Time (ns)
32
Typical Turn-Off Delay Time (ns)
55
Typical Turn-On Delay Time (ns)
28
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
16.07(Max)
Package Width
4.9(Max)
Package Length
10.36(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-220FP
Vds - Drain-Source Breakdown Voltage
800 V
Vgs th - Gate-Source Threshold Voltage
5 V
Pd - Power Dissipation
50 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
1.5 Ohms
Id - Continuous Drain Current
4 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N