Littelfuse IXFR30N60P

包装/外壳

TO-247-3

材料

Si

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

15

Maximum Drain Source Resistance (mOhm)

250@10V

Typical Gate Charge @ Vgs (nC)

85@10V

Typical Gate Charge @ 10V (nC)

85

Typical Input Capacitance @ Vds (pF)

3820@25V

Maximum Power Dissipation (mW)

166000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

75

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 247

Id - Continuous Drain Current

15 A

Rds On - Drain-Source Resistance

250 mOhms

Mounting Styles

通孔

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

166 W

Vds - Drain-Source Breakdown Voltage

600 V

系列

IXFR30N60

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N