Littelfuse IXFR36N50P

材料

Si

EU RoHS

符合免除

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

19

Maximum Drain Source Resistance (MOhm)

190@10V

Typical Gate Charge @ Vgs (nC)

93@10V

Typical Gate Charge @ 10V (nC)

93

Typical Input Capacitance @ Vds (pF)

5500@25V

Maximum Power Dissipation (mW)

156000

Typical Fall Time (ns)

23

Typical Rise Time (ns)

23

Typical Turn-Off Delay Time (ns)

82

Typical Turn-On Delay Time (ns)

29

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 247

Continuous Drain Current

19(A)

Drain-Source On-Volt

500(V)

Operating Temperature Classification

Military

Package Type

ISOPLUS 247

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

156(W)

信道型

N