Littelfuse IXFR44N50Q

包装/外壳

TO-247-3

材料

Si

Maximum Drain Source Resistance (mOhm)

120@10V

Maximum Continuous Drain Current (A)

34

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

500

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

HiperFET

Category

功率MOSFET

PPAP

无

Automotive

无

EU RoHS

符合免除

Typical Gate Charge @ Vgs (nC)

190@10V

Typical Gate Charge @ 10V (nC)

190

Typical Input Capacitance @ Vds (pF)

7000@25V

Maximum Power Dissipation (mW)

310000

Typical Fall Time (ns)

10

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

75

Typical Turn-On Delay Time (ns)

33

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 247

Vds - Drain-Source Breakdown Voltage

500 V

Pd - Power Dissipation

310 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

154 mOhms

Id - Continuous Drain Current

34 A

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N