Littelfuse IXFR55N50

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

48

Maximum Drain Source Resistance (MOhm)

90@10V

Typical Gate Charge @ Vgs (nC)

330@10V

Typical Gate Charge @ 10V (nC)

330

Typical Input Capacitance @ Vds (pF)

9400@25V

Maximum Power Dissipation (mW)

400000

Typical Fall Time (ns)

45

Typical Rise Time (ns)

60

Typical Turn-Off Delay Time (ns)

120

Typical Turn-On Delay Time (ns)

45

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Standard Package Name

SOP

Supplier Package

ISOPLUS 247

Lead Shape

通孔

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N