Littelfuse IXFR80N50Q3

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (MOhm)

72@10V

Typical Gate Charge @ Vgs (nC)

200@10V

Typical Gate Charge @ 10V (nC)

200

Typical Input Capacitance @ Vds (pF)

10000@25V

Maximum Power Dissipation (mW)

570000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

43

Typical Turn-On Delay Time (ns)

30

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 247

零件状态

活跃

引脚数量

3

配置

Single

信道型

N