Littelfuse IXFT18N100Q3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

6.5

Maximum Continuous Drain Current (A)

18

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

660@10V

Typical Gate Charge @ Vgs (nC)

90@10V

Typical Gate Charge @ 10V (nC)

90

Typical Input Capacitance @ Vds (pF)

4890@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

13

Typical Rise Time (ns)

32

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

37

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

零件状态

活跃

引脚数量

3

配置

Single

信道型

N