Littelfuse IXTA1N170DHV

Package Height

4.7(Max)

Mounting

表面贴装

Maximum Diode Forward Voltage (V)

1.3

Typical Reverse Recovery Time (ns)

2800

Typical Gate Plateau Voltage (V)

-2.25

Typical Diode Forward Voltage (V)

0.75

Maximum Positive Gate Source Voltage (V)

20

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

46

Typical Turn-Off Delay Time (ns)

130

Typical Rise Time (ns)

38

Typical Fall Time (ns)

216

Maximum Power Dissipation (mW)

290000

Typical Output Capacitance (pF)

95

Typical Reverse Transfer Capacitance @ Vds (pF)

30

Typical Input Capacitance @ Vds (pF)

3090@25V

Typical Reverse Recovery Charge (nC)

63000

Typical Gate to Source Charge (nC)

3.7

Typical Gate to Drain Charge (nC)

25

Typical Gate Charge @ Vgs (nC)

47@5V

Maximum Drain Source Resistance (MOhm)

16000@0V

Maximum IDSS (uA)

10

Maximum Gate Source Leakage Current (nA)

100

Operating Junction Temperature (°C)

150

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

1700

Number of Elements per Chip

1

Channel Mode

Depletion

Category

功率MOSFET

PPAP

无

Automotive

无

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

符合免除

Package Width

9.4(Max)

Package Length

10.2(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

TO-263HV

Qualification

-

Continuous Drain Current Id

1A

零件状态

活跃

引脚数量

3

配置

Single

功率耗散

290W

信道型

N