Littelfuse IXTA220N04T2-TRL

包装/外壳

TO-263-7

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TrenchT2

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

220

Maximum Drain Source Resistance (MOhm)

3.5@10V

Typical Gate Charge @ Vgs (nC)

112@10V

Typical Gate Charge @ 10V (nC)

112

Typical Input Capacitance @ Vds (pF)

6820@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

21

Typical Rise Time (ns)

21

Typical Turn-Off Delay Time (ns)

31

Supplier Package

D2PAK

Tab

Tab

PCB changed

2

Package Length

10.41(Max)

Package Width

9.4(Max)

Package Height

4.7(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

175

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

15

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

112 nC

Rds On - Drain-Source Resistance

3.5 mOhms

Id - Continuous Drain Current

220 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N