Littelfuse IXTA3N120

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

3

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

4500@10V

Typical Gate Charge @ Vgs (nC)

42@10V

Typical Gate Charge @ 10V (nC)

42

Typical Gate to Drain Charge (nC)

21

Typical Gate to Source Charge (nC)

8

Typical Input Capacitance @ Vds (pF)

1100@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

40@25V

Minimum Gate Threshold Voltage (V)

2.5

Typical Output Capacitance (pF)

110

Maximum Power Dissipation (mW)

200000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

17

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

12

Typical Gate Plateau Voltage (V)

5

Typical Reverse Recovery Time (ns)

700

Maximum Diode Forward Voltage (V)

1.5

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

包装

Tape and Reel|Tube

零件状态

活跃

引脚数量

3

配置

Single

信道型

N