参数名
参数值
参数名
参数值
包装/外壳
TO-263-3
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Process Technology
TrenchP
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
50
Maximum Gate Source Voltage (V)
±15
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
48
Maximum Gate Source Leakage Current (nA)
50
Maximum IDSS (uA)
10
Maximum Drain Source Resistance (mOhm)
30@10V
Typical Input Capacitance @ Vds (pF)
3660@25V
Maximum Power Dissipation (mW)
150000
Typical Fall Time (ns)
13
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
30
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
4.7(Max)
Package Width
9.4(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Supplier Package
D2PAK
Vds - Drain-Source Breakdown Voltage
50 V
Transistor Polarity
P-Channel
Mounting Styles
SMD/SMT
Rds On - Drain-Source Resistance
30 mOhms
Id - Continuous Drain Current
48 A
系列
IXTA48P05
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
P