Littelfuse IXTA80N075L2

包装/外壳

TO-263-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

75

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

80

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (MOhm)

24@10V

Typical Gate Charge @ 10V (nC)

103

Typical Input Capacitance @ Vds (pF)

3600@25V

Maximum Power Dissipation (mW)

357000

Typical Fall Time (ns)

12

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.4(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Qualification

-

Continuous Drain Current Id

80A

Vds - Drain-Source Breakdown Voltage

75 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

357 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

103 nC

Rds On - Drain-Source Resistance

24 mOhms

Id - Continuous Drain Current

80 A

包装

Tube

系列

Very High Voltage

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

357W

信道型

N