Littelfuse IXTH10N100D2

包装/外壳

TO-247-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Depletion

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

10(Min)

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

1500@0V

Typical Gate Charge @ Vgs (nC)

200@5V

Typical Gate Charge @ 10V (nC)

200

Typical Input Capacitance @ Vds (pF)

5320@25V

Maximum Power Dissipation (mW)

695000

Typical Fall Time (ns)

164

Typical Rise Time (ns)

36

Typical Turn-Off Delay Time (ns)

33

Typical Turn-On Delay Time (ns)

33

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

MSL

-

Qualification

-

Continuous Drain Current Id

10A

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

695 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

200 nC

Rds On - Drain-Source Resistance

1.5 Ohms

Id - Continuous Drain Current

10 A

零件状态

活跃

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

695W

信道型

N