注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥54.488586
10
¥51.404326
100
¥48.494651
500
¥45.749664
1000
¥43.160067
Littelfuse IXTH130N10T
- 收藏
- 对比
IXTH130N10T
1475-IXTH130N10T
晶体管 - FET,MOSFET - 阵列
TO-247-3
大陆
立即发货

IXTH130N10T datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
--最小包装量--
¥
总价: ¥
IXTH130N10T详情
Littelfuse IXTH130N10T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
EU RoHS
符合免除
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Continuous Drain Current (A)
130
Maximum Drain Source Resistance (MOhm)
9.1@10V
Typical Gate Charge @ Vgs (nC)
104@10V
Typical Gate Charge @ 10V (nC)
104
Typical Input Capacitance @ Vds (pF)
5080@25V
Maximum Power Dissipation (mW)
360000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
47
Typical Turn-Off Delay Time (ns)
44
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
通孔
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
Vds - Drain-Source Breakdown Voltage
100 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
360 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
104 nC
Rds On - Drain-Source Resistance
8.5 mOhms
Id - Continuous Drain Current
130 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N
IXTH130N10T拓展信息
Littelfuse
Littelfuse
Littelfuse
Littelfuse
Littelfuse
Littelfuse
Littelfuse
Littelfuse
Littelfuse
Littelfuse






哦! 它是空的。