参数名
参数值
参数名
参数值
包装/外壳
TO-247-3
EU RoHS
符合免除
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Continuous Drain Current (A)
130
Maximum Drain Source Resistance (MOhm)
9.1@10V
Typical Gate Charge @ Vgs (nC)
104@10V
Typical Gate Charge @ 10V (nC)
104
Typical Input Capacitance @ Vds (pF)
5080@25V
Maximum Power Dissipation (mW)
360000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
47
Typical Turn-Off Delay Time (ns)
44
Typical Turn-On Delay Time (ns)
30
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
通孔
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
Vds - Drain-Source Breakdown Voltage
100 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
360 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
104 nC
Rds On - Drain-Source Resistance
8.5 mOhms
Id - Continuous Drain Current
130 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N