Littelfuse IXTH1N200P3

包装/外壳

TO-247-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

2000

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (MOhm)

40000@10V

Typical Gate Charge @ Vgs (nC)

23.5@10V

Typical Gate Charge @ 10V (nC)

23.5

Typical Input Capacitance @ Vds (pF)

646@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

80

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

37

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.45(Max)

Package Width

5.3(Max)

Package Length

16.24(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

MSL

-

Qualification

-

Continuous Drain Current Id

1A

Vds - Drain-Source Breakdown Voltage

2 kV

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

23.5 nC

Rds On - Drain-Source Resistance

40 Ohms

Id - Continuous Drain Current

1 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

125W

信道型

N