参数名
参数值
参数名
参数值
包装/外壳
TO-247-3
EU RoHS
符合免除
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
500
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
20
Maximum Drain Source Resistance (MOhm)
450@10V
Typical Gate Charge @ Vgs (nC)
103@10V
Typical Gate Charge @ 10V (nC)
103
Typical Input Capacitance @ Vds (pF)
5120@25V
Maximum Power Dissipation (mW)
460000
Typical Fall Time (ns)
34
Typical Rise Time (ns)
32
Typical Turn-Off Delay Time (ns)
80
Typical Turn-On Delay Time (ns)
26
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.45(Max)
Package Width
5.3(Max)
Package Length
16.24(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO-247
Supplier Package
TO-247AD
Lead Shape
通孔
Qualification
-
Continuous Drain Current Id
20A
Vds - Drain-Source Breakdown Voltage
500 V
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
460 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
103 nC
Rds On - Drain-Source Resistance
450 mOhms
Id - Continuous Drain Current
20 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
460W
信道型
P