Littelfuse IXTH260N055T2

包装/外壳

TO-247-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

55

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

260

Maximum Drain Source Resistance (mOhm)

3.3@10V

Typical Gate Charge @ Vgs (nC)

140@10V

Typical Gate Charge @ 10V (nC)

140

Typical Input Capacitance @ Vds (pF)

10800@25V

Maximum Power Dissipation (mW)

480000

Typical Fall Time (ns)

24

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Continuous Drain Current

260(A)

Drain-Source On-Volt

55(V)

Operating Temperature Classification

Military

Package Type

TO-247

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

55 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

480 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

140 nC

Rds On - Drain-Source Resistance

3.3 mOhms

Id - Continuous Drain Current

260 A

零件状态

活跃

类型

功率MOSFET

技术

Si

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

480(W)

信道型

N