参数名
参数值
参数名
参数值
包装/外壳
TO-247-3
EU RoHS
符合免除
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
500
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
24
Maximum Drain Source Resistance (mOhm)
270@10V
Typical Gate Charge @ Vgs (nC)
48@10V
Typical Gate Charge @ 10V (nC)
48
Typical Input Capacitance @ Vds (pF)
2890@25V
Maximum Power Dissipation (mW)
480000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
9
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
Vds - Drain-Source Breakdown Voltage
500 V
Vgs th - Gate-Source Threshold Voltage
4.5 V
Pd - Power Dissipation
480 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
48 nC
Rds On - Drain-Source Resistance
270 mOhms
Id - Continuous Drain Current
24 A
系列
IXTH460
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N