Littelfuse IXTH52N65X

包装/外壳

TO-247-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

52

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

68@10V

Typical Gate Charge @ Vgs (nC)

113@10V

Typical Gate Charge @ 10V (nC)

113

Typical Input Capacitance @ Vds (pF)

4350@25V

Maximum Power Dissipation (mW)

660000

Typical Fall Time (ns)

16

Typical Rise Time (ns)

57

Typical Turn-Off Delay Time (ns)

63

Typical Turn-On Delay Time (ns)

26

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

660 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

113 nC

Rds On - Drain-Source Resistance

68 mOhms

Id - Continuous Drain Current

52 A

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N