Littelfuse IXTH96N25T

包装/外壳

TO-247-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchHV

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

250

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

96

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

29@10V

Typical Gate Charge @ Vgs (nC)

114@10V

Typical Gate Charge @ 10V (nC)

114

Typical Input Capacitance @ Vds (pF)

6100@25V

Maximum Power Dissipation (mW)

625000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

59

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247

Vds - Drain-Source Breakdown Voltage

250 V

Pd - Power Dissipation

625 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

29 mOhms

Id - Continuous Drain Current

96 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N