Littelfuse IXTK170N10P

包装/外壳

TO-264-3

EU RoHS

符合免除

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

Polar

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

170

Maximum Drain Source Resistance (MOhm)

9@10V

Typical Gate Charge @ Vgs (nC)

198@10V

Typical Gate Charge @ 10V (nC)

198

Typical Input Capacitance @ Vds (pF)

6000@25V

Maximum Power Dissipation (mW)

715000

Typical Fall Time (ns)

33

Typical Rise Time (ns)

50

Typical Turn-Off Delay Time (ns)

90

Typical Turn-On Delay Time (ns)

35

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

Vds - Drain-Source Breakdown Voltage

100 V

Pd - Power Dissipation

714 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

9 mOhms

Id - Continuous Drain Current

170 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N