Littelfuse IXTN110N20L2

包装/外壳

SOT-227-4

EU RoHS

符合免除

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

100

Maximum Drain Source Resistance (MOhm)

24@10V

Typical Gate Charge @ Vgs (nC)

500@10V

Typical Gate Charge @ 10V (nC)

500

Typical Input Capacitance @ Vds (pF)

23000@25V

Maximum Power Dissipation (mW)

735000

Typical Fall Time (ns)

135

Typical Rise Time (ns)

100

Typical Turn-Off Delay Time (ns)

33

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Continuous Drain Current Id

100A

Vr - Reverse Voltage

100 V

Typical Turn-On Delay Time

40 ns

Pd - Power Dissipation

735 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

底座安装

Rds On - Drain-Source Resistance

24 mOhms

Typical Turn-Off Delay Time

33 ns

零件状态

活跃

类型

Linear Power MOSFET

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

配置

单双源

功率耗散

735W

上升时间

100 ns

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块