Littelfuse IXTN210P10T

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

210

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

7.5@10V

Typical Gate Charge @ Vgs (nC)

740@10V

Typical Gate Charge @ 10V (nC)

740

Typical Input Capacitance @ Vds (pF)

69500@25V

Maximum Power Dissipation (mW)

830000

Typical Fall Time (ns)

55

Typical Rise Time (ns)

98

Typical Turn-Off Delay Time (ns)

165

Typical Turn-On Delay Time (ns)

90

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Continuous Drain Current

210(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

SOT-227B

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±15(V)

Number of Elements

1

Rad Hardened

无

零件状态

活跃

类型

功率MOSFET

引脚数量

4

极性

P

配置

单双源

功率耗散

830(W)

信道型

P