Littelfuse IXTN660N04T4

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

660

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

0.85@10V

Typical Gate Charge @ Vgs (nC)

860@10V

Typical Gate Charge @ 10V (nC)

860

Typical Gate to Drain Charge (nC)

290

Typical Gate to Source Charge (nC)

240

Typical Input Capacitance @ Vds (pF)

44000@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

3500@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

6500@25V

Maximum Power Dissipation (mW)

1040000

Typical Fall Time (ns)

260

Typical Rise Time (ns)

430

Typical Turn-Off Delay Time (ns)

386

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Maximum Pulsed Drain Current @ TC=25°C (A)

1800

Typical Gate Plateau Voltage (V)

5.8

Typical Reverse Recovery Time (ns)

60

Maximum Diode Forward Voltage (V)

1.4

Mounting

Screw

Package Width

25.07(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Qualification

-

Continuous Drain Current Id

660A

零件状态

活跃

引脚数量

4

配置

单双源

功率耗散

1.04kW

信道型

N