参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
EU RoHS
Compliant
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
75
Maximum Continuous Drain Current (A)
55
Maximum Drain Source Resistance (mOhm)
19.5@10V
Typical Gate Charge @ Vgs (nC)
33@10V
Typical Gate Charge @ 10V (nC)
33
Typical Input Capacitance @ Vds (pF)
1400@25V
Maximum Power Dissipation (mW)
130000
Typical Fall Time (ns)
41
Typical Rise Time (ns)
50
Typical Turn-Off Delay Time (ns)
44
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
通孔
Package Height
9.15(Max)
Package Width
4.83(Max)
Package Length
10.66(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-220AB
Vds - Drain-Source Breakdown Voltage
75 V
Pd - Power Dissipation
130 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Rds On - Drain-Source Resistance
19.5 mOhms
Id - Continuous Drain Current
55 A
零件状态
Obsolete
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N